zsztnl-donauekoi ipioducti, one. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 buv1 8 buv1 9 np n hig h curen t switchin g transistor s 2 5 15(0.99 ) 2667( 1 05 ) 1067(042 ) 1 1 18(044 ) 3 (cas. ) 6,3 5 (0.25 ) 9,15(036 ) 792(0312 ) 1270(0.50 ) designe d fo r hig h energ y application s requirin g robus t fas t switchin g device s feature s ? fas t switchin g ? lowvce(sat ) ? hig h switchin g current s ? hig h reliabilit y ? militar y option s availabl e pi n 1 - gat e to- 3 (to-204ae ) pi n 2 - drai n cas e - sourc e application s ? hig h efficienc y converter s ? moto r driv e contro l ? switchin g regulato r absolut e maximu m rating s (teas e = 25 c unles s otherwis e stated ) v cb o vce o veb o ? c 'c(pk ) i b 'b(pk ) pto t t st g t j r 9j c collector-emitte r voltag e (i e =0 ) collector-emitte r voltag e (|b=o ) emitter - bas e voltag e (l c =0 ) collecto r curren t pea k collecto r curren t bas e curren t pea k bas e curren t tota l dissipatio n @ t cas e = 25 c storag e temperatur e rang e maximu m operatin g junctio n temperatur e therma l resistanc e junctio n - cas e buv1 8 buv1 9 120 v 160 v 60 v 80 v 7 v 7 v 50 a 50 a 90 a 70 a 16 a 12 a 40 a 30 a 250 w -6 5 t o 200 c 200 c ma x 0.7c/ w n j semi-conductors reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . nj semi-conductor s encourage s customer s to verif y tha t datasheets are curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
buv1 8 buv1 9 electrica l characteristics(t cas e = 25 c unles s otherwis e stated ) paramete r v ceo(sus) * collecto r - emitte r sustainin g voltag e v ce(sat> * collecto r - emitte r saturatio n voltag e v be(sat> * bas e - emitte r saturatio n voltag e v(br)eb o emitte r - bas e breakdow n voltag e i ce x collecto r cut-of f curren t oc a i eb o emitte r cut-of f curren t switchin g characteristic s f t transitio n frequenc y t o n turn-o n tim e t r fal l tim e t s storag e tim e t o n turn-o n tim e t r fal l tim e t s storag e tim e tes t condition s i b = 0 i c = 0.2 a buv1 8 l = 25m h i b = 0 i c = 0.2 a buv1 9 l - 25m h i c = 40 a i b = 4 a buv1 8 l c = 80 a i b = 8 a i c = 30 a i b = 3 a buv1 9 l c = 60 a i b = 6 a i =80 a i b = 8 a buv1 8 \j d l c = 60 a i b = 6 a buv1 9 l c = o a i e = 50m a v r f = - 1 5 v vp p =vr-f y t cas e ~ 100 c i c = o a v e b = 5 v f = 10mh z v ce =15 v i c =2 a v c c = 60 v buv1 8 l c = 80 a m d/ l v c c = 80 v buv1 9 l c = 60 a | b 1 = -| b 2 = 6 a min . typ . max . 6 0 8 0 0. 6 1. 5 0. 6 1. 2 2. 2 2. 0 7 1. 0 3. 0 1. 0 8 1. 2 1. 5 0.1 8 0.2 5 0. 6 1. 1 0. 9 1. 3 0.1 7 0.2 5 0. 6 1. 1 uni t v v vv m a mh z [is note s * puls e test : t p = soo^s , 5 < 2 % downloaded from: http:///
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